FDME410NZT datasheet

Маркировка

FDME410NZT
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FDME410NZT Continuous Drain Current: 7 A Current - Continuous Drain (id) @ 25?° C: 7A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 35 S Gate Charge (qg) @ Vgs: 13nC @ 4.5V Gate Charge Qg: 9.2 nC Gate-source Breakdown Voltage: 8 V Input Capacitance (ciss) @ Vds: 1025pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: * Power - Max: 700mW Power Dissipation: 1.4 W Rds On (max) @ Id, Vgs: 26 mOhm @ 7A, 4.5V Resistance Drain-source Rds (on): 19 mOhms Series: PowerTrench?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 1V @ 250?µA Other Names: FDME410NZTTR
Количество страниц

7 шт.
Формат

PDF
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Размер файла

235,20 KB